Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures
نویسندگان
چکیده
منابع مشابه
MEMS Test Structures for Residual Stress Measurements
A set of microstructures for in situ stress measurement is presented, based on a lancet principle having dedicated designs for the amplification of dimensional variation induced by internal stress of the materials. The presented technique has an advantage over the traditional rotating structures and wafer curvature measurements in terms of the simplified readout mechanism. The test structures a...
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Grown lattice matched to GaN, InAlN-based heterojunction field effect transistors (HFETs) are promising due to the relatively large band discontinuity at the interface and lack of misfit strain. Despite the recent progress in the growth, there still exists some questions as to the true lattice matching condition of InAlN to GaN due to discrepancies in the value of the lattice parameters of the ...
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ژورنال
عنوان ژورنال: physica status solidi (a)
سال: 2010
ISSN: 1862-6300
DOI: 10.1002/pssa.200983556